product brief thinq!? generation 5 represents infneons leading edge technology for sic schottky barrier diodes. the infneon proprietary difusion soldering process, already introduced with g3, is now combined with a new, more compact design and thin wafer technology. the result is a new family of products showing improved efciency over all load conditions, coming from both the improved thermal characteristics and a lower fgure of merit (q c x v f ) . the new thinq!? generation 5 has been designed to complement our 650v coolmos? families: this ensures meeting the most stringent application requirements in this voltage range. ? v br at 650v ? improved figure of merit (q c x v f ) ? no reverse recovery charge ? soft switching reverse recovery waveform ? temperature independent switching behavior ? high operating temperature (t j max 175c) ? improved surge capability ? pb-free lead plating ? 10 years manufacturing of sic diodes benefts ? higher safety margin against overvoltage; best match with coolmos? 650v products ? improved efciency over all load conditions ? increased efciency compared to silicon diode alternatives ? reduced emi compared to snappier silicon diode reverse recovery waveform ? highly stable switching performance ? reduced cooling requirements ? reduced risks of thermal runaway ? rohs compliant ? high quality know-how and capacity in sic diode manufacture applications ? telecom/server smps ? solar/ups ? pc silverbox ? led/lcd tv ? motor drives ? hid lighting www.infneon.com/sic features 650v sic thinq!? generation 5 diodes your way is our way: improve efciency and solution costs experimental results efciency comparison among the three ifx generations of 8a sic diodes a) absolute values b) referred to thinq!? gen 5 (ccm pfc, high line, pout max=1800 w, f sw =65 khz, t hs =60c, mosfet: ipw60r075cp) 9 7.0 97. 5 9 8.0 98. 5 10% 20% 30% 40% 50% 60% 70% 80%9 0% 100% - 0.15 - 0.10 - 0.05 0.00 0.05 0.10 0.15 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% output power [% nominal ] output power [% nominal ] e ciency di erenc e [%] e ciency [%] generation 5 generation 3 generation 2 generation 5 generation 3 generation 2 a) b)
product brief published by infineon technologies austria ag 9500 villach, austria ? 2012 infineon technologies ag. all rights reserved. visit us: www.infineon.com order number: b152-h9677-g1-x-7600-db2012-0016 date: 09 / 2012 att e ntion pleas e ! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschafenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, infneon technologies hereby disclaims any and all warran- ties and liabilities of any kind, including without limita- tion warranties of non-infringement of intellectual property rights of any third party. informa tion for further information on technology, delivery terms and conditions and prices please contact your nearest infneon technologies ofce (www.infneon.com). w arnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infneon technologies ofce. infneon technologies components may only be used in life-support devices or systems with the express written approval of infneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to afect the safety or efectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reason- able to assume that the health of the user or other persons may be endangered. 650v sic thinq!? generation 5 diodes your way is our way: improve efciency and solution costs i nfineon: leading technology p lanned product portfolio an important achievement with gen 5 is the industrial implementation of a thinning process which allows reducing the wafer thickness to almost 1/3 while maintaining the proven quality and yield levels. the thinning reduces the resistive contribution of the substrate (see picture on the right) and one of its most striking beneft is a consistent improvement of the surge current robustness, now at comparable level or even higher (for if <10a) than for g2 in spite of a smaller chip size. in combination with our proprietary difusion soldering, the reduced thickness further contributes to decrease the overall thermal resistance in the package. the pictures below show the temperature increase at the junction under given forward current conditions for the same device area: left: 350m chip with 60m soft solder; middle: 350m chip with dif. solder; right: 110m chip with dif. solder please check the single product status/availability on: www.infneon.com/sic 650v to-220 r2l to-247 new! d 2 pak r2l new! thinpak 8x8 new! 2a idh02g65c5 idk02g65c5 idl02g65c5 3a idh03g65c5 idk03g65c5 4a idh04g65c5 idk04g65c5 idl04g65c5 5a idh05g65c5 idk05g65c5 6a idh06g65c5 idk06g65c5 idl06g65c5 8a idh08g65c5 idk08g65c5 idl08g65c5 9a idh09g65c5 idk09g65c5 10a idh10g65c5 idw10g65c5 idk10g65c5 idl10g65c5 12a idh12g65c5 idw12g65c5 idk12g65c5 idl12g65c5 16a idh16g65c5 idw16g65c5 20a idh20g65c5 idw20g65c5 30a idw30g65c5 40a IDW40G65C5 60 50 40 30 20 10 0 0 2 4 6 8 vf [v] if [a/mm 2 ] g5 g2-g3 d=350m@175c d=110m@175c
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